1 CMPA2560025F 25 w, 2500 - 6000 mhz, gan mmic power amplifer crees CMPA2560025F is a gallium nitride (gan) high electron mobility transistor (hemt) based monolithic microwave integrated circuit (mmic). gan has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. gan hemts also offer greater power density and wider bandwidths compared to si and gaas transistors. this mmic contains a two-stage reactively matched amplifer enabling very wide bandwidths to be achieved in a small footprint screw-down package featuring a copper-tungsten heat-sink. features ? 24 db small signal gain ? 25 w typical p sat ? operation up to 28 v ? high breakdown voltage ? high temperature operation applications ? ultra broadband amplifers ? fiber drivers ? test instrumentation ? emc amplifer drivers rev 2.4 C sept ember 2012 pn: CMPA2560025F package type: 780019 typical performance over 2.5-6.0 ghz (t c = 25?c) parameter 2.5 ghz 4.0 ghz 6.0 ghz units gain 27.5 24.3 23.1 db saturated output power, p sat 1 35.8 37.5 25.6 w power gain @ p out 43 dbm 23.1 20.9 16.3 db pae @ p out 43 dbm 31.5 32.8 30.7 % note 1 : p sat is defned as the rf output power where the device starts to draw positive gate current in the range of 7-13 ma. figure 1. subject to change without notice. www.cree.com/rf
2 absolute maximum ratings (not simultaneous) at 25?c parameter symbol rating units drain-source voltage v dss 84 vdc gate-source voltage v gs -10, +2 vdc storage temperature t stg -65, +150 ?c operating junction temperature t j 225 ?c forward gate current i g 13 ma screw torque t 40 in-oz thermal resistance, junction to case r jc 2.5 ?c/w electrical characteristics (frequency = 2.5 ghz to 6.0 ghz unless otherwise stated; t c = 25?c) characteristics symbol min. typ. max. units conditions dc characteristics gate threshold voltage v (gs)th -3.8 -3.0 -2.3 v v ds = 10 v, i d = 20 ma gate quiescent voltage v (gs)q C -2.7 C vdc v dd = 28 v, i d = 1200 ma drain-source breakdown voltage v bd 84 100 C v v gs = -8 v, i d = 20 ma saturated drain current 1 i dc 8.0 9.7 C a v ds = 6.0 v, v gs = 2.0 v rf characteristics 2 small signal gain s21 19.5 24 C db v dd = 28 v, i d = 1200 ma input return loss s11 C -8 -5 db v dd = 28 v, i d = 1200 ma output return loss s22 C -8 -3 db v dd = 28 v, i d = 1200 ma power output 1 p out 22.0 30 C w v dd = 28 v, i d = 1200 ma, p in = 26 dbm, freq = 4.0 ghz power output 2 p out 12.5 17 C w v dd = 28 v, i d = 1200 ma, p in = 26 dbm, freq = 5.0 ghz power output 3 p out 15.5 20 C w v dd = 28 v, i d = 1200 ma, p in = 26 dbm, freq = 6.0 ghz power added effciency 1 pae 34 40 C % v dd = 28 v, i d = 1200 ma, p in = 26 dbm, freq = 4.0 ghz power added effciency 2 pae 20 26 C % v dd = 28 v, i d = 1200 ma, p in = 26 dbm, freq = 5.0 ghz power added effciency 3 pae 24 30 C % v dd = 28 v, i d = 1200 ma, p in = 26 dbm, freq = 6.0 ghz power gain 1 g p 17.5 18.8 C db v dd = 28 v, i d = 1200 ma, p in = 26 dbm, freq = 4.0 ghz power gain 2 g p 15.0 16.3 C db v dd = 28 v, i d = 1200 ma, p in = 26 dbm, freq = 5.0 ghz power gain 3 g p 16.0 17.0 C db v dd = 28 v, i d = 1200 ma, p in = 26 dbm, freq = 6.0 ghz output mismatch stress vswr C C 5 : 1 y no damage at all phase angles, v dd = 28 v, i dq = 1200 ma, p in = 26 dbm notes: 1 scaled from pcm data. 2 all data cw tested in CMPA2560025F-tb. CMPA2560025F rev 2.4 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2008-2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
3 typical performance small signal gain vs frequency input & output return losses vs frequency power gain vs frequency gain vs output power as a function of frequency 10 12 14 16 18 20 22 24 26 28 30 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 frequency (ghz) gain (db) -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 frequency (ghz) gain (db) s11 typical s22 typical 10 12 14 16 18 20 22 24 26 28 30 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 frequency (ghz) power gain (db) output power = 44 dbm output power = 43 dbm 10 12 14 16 18 20 22 24 26 28 30 18 22 26 30 34 38 42 46 output power (dbm) gain (db) 2.5 ghz 4.0 ghz 6.0 ghz CMPA2560025F rev 2.4 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2008-2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
4 typical performance saturated output power performance (p sat ) vs frequency frequency (ghz) p sat (dbm) p sat (w) 2.5 45.54 35.8 3.0 44.43 27.7 3.5 45.52 35.7 4.0 45.74 37.5 4.5 44.82 30.4 5.0 45.08 32.2 5.5 45.07 32.1 6.0 44.08 25.6 note: p sat is defned as the rf output power where the device starts to draw positive gate current in the range of 7-13 ma. power added effciency vs output power pae at 43 dbm and 44 dbm output as a function of frequency power vs frequency 0% 5% 10% 15% 20% 25% 30% 35% 40% 45% 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 frequency (ghz) power added efficiency, pae (%) pae 44 dbm pae 43 dbm 0% 5% 10% 15% 20% 25% 30% 35% 40% 45% 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 output power, p out (dbm) power added efficiency, pae (%) 2.5 ghz 4.0 ghz 6.0 ghz 40 41 42 43 44 45 46 47 48 49 50 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 frequency (ghz) saturated output power, p sat (dbm) typical psat (dbm) CMPA2560025F rev 2.4 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2008-2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
5 typical performance 2 nd harmonic vs output power im3 vs total average power as a function of frequency as a function of frequency gain at p out of 40 dbm at 25c & 75c vs frequency note: the temperature coeffcient is -0.05 db/c 0 5 10 15 20 25 30 2.5 2.8 3.1 3.4 3.7 4.0 frequency (ghz) gain (db) ambient (25c) hot (75c) -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 22 24 26 28 30 32 34 36 38 40 42 44 total average output power (dbm) im3 (dbc) 2.5 ghz 4.0 ghz 6.0 ghz -70 -60 -50 -40 -30 -20 -10 0 22 24 26 28 30 32 34 36 38 40 42 44 46 output power, p out (dbm) 2 nd harmonic (dbc) 2.5 ghz 4.0 ghz 6.0 ghz CMPA2560025F rev 2.4 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2008-2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
6 general device information the CMPA2560025F is a two stage gan hemt mmic power amplifer, which operates between 2.5- 6.0 ghz. the amplifer typically provides 25 db of small signal gain and 25 w saturated output power with an associated power added effciency of better than 30 %. the wideband amplifers input and output are internally matched to 50 ohm. the amplifer requires bias from dedicated ports. the rf-input and output both require an external dc -block. dc volt - age should not be applied to the rf output pin due to the internal matching elements. the two gate pins, g1 and g2, are internally connected so it is suffcient to apply bias to only one of them. the dr ain pins, d1 and d2, should both be connected to the drain supply. the component has internal dc-decoupling on the gate and drain pins, 1840pf and 920pf respectively. the test fxture also provides extra decoupling capacitors on all supply lines. details of these com - ponents can be found on the bill of materials. the CMPA2560025F is provided in a lead-less package format. the input and output connections are gold plated to enable gold bond wire attach at the next level assembly. the measurements in this data sheet were taken on devices wire-bonded to the test fxture with 2 mil gold bond wires. all losses associated with the test fxture are included in the measurements. electrostatic discharge (esd) classifcations parameter symbol class test methodology human body model hbm 1a (> 250 v) jedec jesd22 a114-d charge device model cdm ii (200 < 500 v) jedec jesd22 c101-c CMPA2560025F rev 2.4 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2008-2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
7 CMPA2560025F cw power dissipation de-rating curve note 1. area exceeds maximum case operating temperature (see page 2). 0 10 20 30 40 50 60 70 0 50 100 150 200 250 d c po w er d i ssi p ati o n ( w ) maximum case temperature (c) CMPA2560025F derating note 1 CMPA2560025F rev 2.4 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2008-2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
8 CMPA2560025F-tb demonstration amplifer circuit CMPA2560025F-tb demonstration amplifer circuit outline CMPA2560025F rev 2.4 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2008-2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
9 CMPA2560025F-tb demonstration amplifer circuit bill of materials designator description qty j1,j2 connector, sma, amp1052901-1 2 j3 header, rt. plz. 1, cen lk, 5 pos 1 c1,c2,c3 cap, 2400 pf, broadband block, c08bl242x-5un-x0t 2 3 c4,c5,c6 cap, 0.1 uf, +/- 10 % , 0805 3 r1 res, 0 ohm, 1206 1 - pcb, taconic, rf-35-0100-ch/ch 1 q1 CMPA2560025F 1 notes 1 the CMPA2560025F is connected to the pcb with 2.0 mil au bond wires. 2 an external dc block is required on the input and output. product dimensions CMPA2560025F (package type 780019) p r e l i m i n a r y CMPA2560025F rev 2.4 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2008-2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
10 disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for its use or for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications, and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. cree and the cree logo are registered trademarks of cree, inc. for more information, please contact: cree, inc. 4600 silicon drive durham, north carolina, usa 27703 www.cree.com/wireless sarah miller marketing & export cree, rf components 1.919.407.5302 ryan baker marketing cree, rf components 1.919.407.7816 tom dekker sales director cree, rf components 1.919.407.5639 CMPA2560025F rev 2.4 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2008-2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
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